Silicon carbide substrate, 200 mm semi-insulating

• Other · WorldSICC global share, N-type SiC substrates27.6SourcedSICC company news (citing Fuji Keizai) · 2025Open the source →Check this number with Ask %2025+130%How this is computedThe latest value in a series minus the value before it, divided by the earlier value, same series and unit.12 (2023) → 27.6 (2025).Method →Code →Check this number with Ask vs 2023

  Conductive (N-type) and all-type SiC substrates. No dated figure was found for semi-insulating 200 mm substrates specifically.

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  12 %2023SICC company news (citing Fuji Keizai) ↗27.6 %2025SICC company news (citing Fuji Keizai) ↗

  20232025

  Period	Value	Source
  2025	27.6SourcedSICC company news (citing Fuji Keizai) · 2026-03-24Open the source →Check this number with Ask %	SICC company news (citing Fuji Keizai) ↗ primarySICC’s global market share in the N- type S i C substrates rose sharply in 2025, surging from 12% in 2023 to 27.6% and surpassing Wolfspeed.N-type (conductive), not semi-insulating
  2023	12SourcedSICC company news (citing Fuji Keizai) · 2026-03-24Open the source →Check this number with Ask %	SICC company news (citing Fuji Keizai) ↗ primarySICC’s global market share in the N- type S i C substrates rose sharply in 2025, surging from 12% in 2023 to 27.6% and surpassing Wolfspeed.N-type (conductive), not semi-insulating

  Read from the sources Read from the source by an agent; quote matched mechanically against the fetched page; not yet reviewed by a person, 2026-09-24. Each value links the page it came from and quotes the sentence that carries it.

  Series pageDownload CSV

• Other · WorldSICC global share, 8-inch (200 mm) SiC substrates51.3SourcedSICC company news (citing Fuji Keizai) · 2025Open the source →Check this number with Ask %2025

  Conductive (N-type) and all-type SiC substrates. No dated figure was found for semi-insulating 200 mm substrates specifically.

  Period	Value	Source
  2025	51.3SourcedSICC company news (citing Fuji Keizai) · 2026-03-24Open the source →Check this number with Ask %	SICC company news (citing Fuji Keizai) ↗ primarythe company achieved a breakthrough in the 8-inch S iC substrate market, capturing a market share of 51.3%, far exceeding other competitors.Company claim citing Fuji Keizai; context is N-type (conductive) substrates, NOT semi-insulating

  Read from the sources Read from the source by an agent; quote matched mechanically against the fetched page; not yet reviewed by a person, 2026-09-24. Each value links the page it came from and quotes the sentence that carries it.

  Series pageDownload CSV

• Other · WorldSICC global share, 6-inch (150 mm) SiC substrates27.5SourcedSICC company news (citing Fuji Keizai) · 2025Open the source →Check this number with Ask %2025

  Conductive (N-type) and all-type SiC substrates. No dated figure was found for semi-insulating 200 mm substrates specifically.

  Period	Value	Source
  2025	27.5SourcedSICC company news (citing Fuji Keizai) · 2026-03-24Open the source →Check this number with Ask %	SICC company news (citing Fuji Keizai) ↗ primaryin 2025, SICC's global market share of 6-inch products reached 27.5%, surpassing Wolfspeed for the first time.Company claim citing Fuji Keizai

  Read from the sources Read from the source by an agent; quote matched mechanically against the fetched page; not yet reviewed by a person, 2026-09-24. Each value links the page it came from and quotes the sentence that carries it.

  Series pageDownload CSV

Every series on every bottleneck — filter, compare and download.

The 150 mm to 200 mm transition resets everyone’s yield curve at once. Semi-insulating grade is a much smaller field than conductive SiC, and defect density is the gate.

Grade that ships · 200 mm semi-insulating 4H-SiC, micropipe density to specification.

Part of the process · Materials & tools, which takes years, per qualification to loosen once somebody decides to.

8How this is computedSum of four judged scores, each 0–3: concentration + substitution + lead time + inelasticity.Method →Code →Check this number with Ask / 12

Capacity was overbuilt for automotive; a US wafer line is being liquidated. Not binding; watch for the datacentre power story to reverse it.

• 200 mm silicon carbide wafers8/9Estimate, not a measurementIn production at several makers and expanding; the market is currently oversupplied rather than short.By Substrata, open to challenge · 2026-09-15Supporting source →Check this number with Ask · Qualified and entering production

  The larger wafer is the capacity increase: more die per boule at similar cost.

All science →

1. Research35 (Computed: Items per stage = papers, preprints and grants collected for the bottleneck whose relevance score is 2 or more, placed on a stage by the rule in lib/science.ts; judgements are counted separately.)
2. Lab3 (Computed: Items per stage = papers, preprints and grants collected for the bottleneck whose relevance score is 2 or more, placed on a stage by the rule in lib/science.ts; judgements are counted separately.)
3. Pilot1 (Computed: Items per stage = papers, preprints and grants collected for the bottleneck whose relevance score is 2 or more, placed on a stage by the rule in lib/science.ts; judgements are counted separately.)
4. Early0 (Computed: Items per stage = papers, preprints and grants collected for the bottleneck whose relevance score is 2 or more, placed on a stage by the rule in lib/science.ts; judgements are counted separately.)
5. Scale0 (Computed: Items per stage = papers, preprints and grants collected for the bottleneck whose relevance score is 2 or more, placed on a stage by the rule in lib/science.ts; judgements are counted separately.)

judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed

• Paper2026-10-01Journal of Crystal Growth0SourcedOpenAlex, as fetchedOpen the source →Check this number with Ask citations

  Numerical optimization of induction coils structure for TSSG-SiC crystal growth ↗

  Jiangsu University

  Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI

• Paper2026-10-01Applied Physics Reviews0SourcedOpenAlex, as fetchedOpen the source →Check this number with Ask citations

  Unraveling the defect physics of SiC micropipe sidewalls by non-line-of-sight confocal spectromicroscopy: Amphoteric giant traps ↗

  Despite substantial advances in SiC crystal growth, micropipes can still occur in thick and large-diameter SiC wafers, remaining among the most detrimental extended defects associated with device failure. However, the microscopic nature of the defects residing on their internal…

  Chung Yuan Christian UniversityNational Central University

  Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF

• Paper2026-09-11Tribology International0SourcedOpenAlex, as fetchedOpen the source →Check this number with Ask citations

  Tribochemical and contact-mechanical mechanisms in multi-field-assisted chemical mechanical polishing of silicon carbide substrates ↗

  Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI

• Paper2026-09-02physica status solidi (a)0SourcedOpenAlex, as fetchedOpen the source →Check this number with Ask citations

  Investigation of Photoluminescence Black Features in 4H‐SiC Substrates ↗

  In recent years, photoluminescence (PL) black features in 4H‐SiC recorded by a surface inspection tool have plagued substrate suppliers, epitaxy and device manufacturers, as both their root causes and adverse effects remain unclear. This study shows that PL blacks correspond to…

  United Silicon Carbide (United States)

  Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI

• Paper2026-08-24Journal of Manufacturing Processes0SourcedOpenAlex, as fetchedOpen the source →Check this number with Ask citations

  Influence of fixed-abrasive diamond multi-wire sawing process on the slicing quality of different types of 200 mm SiC crystal ingots ↗

  Zhejiang University

  Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI

The full pipeline, by stage →

• 2026-09-15open until 2028-01-31

  Silicon carbide substrates will not become a binding constraint before 2028: no sustained shortage, and at least one more Western capacity retrenchment.

  Settled by · Absence of reported allocation or lead-time extension for 150 mm or 200 mm SiC substrates through 2027, plus at least one further announced closure, sale or capacity cut by a Western maker.

All calls →

A mandate covering the kind of asset that would relieve this row. Not a claim that anyone has funded one, and not advice.

1. 2026-07-17
   TightensCapacityUS KR

   SK Siltron is liquidating SK Siltron CSS, its US silicon carbide wafer subsidiary, by year end.

   WhoSK Siltron

   thelec.net ↗official source

   The sentence that says so

   “SK Siltron is proceeding with the liquidation of SK Siltron CSS, its SiC wafer manufacturing subsidiary located in Michigan. The process is expected to be completed by the end of this year.”

   Check this
2. 2025-12-03
   LoosensCapacityUS

   Coherent adds 300 mm capability to its silicon carbide platform, citing AI and datacentre power demand.

   WhoCoherent

   coherent.com ↗official source

   The sentence that says so

   “Coherent expands silicon carbide platform with 300mm capability to support growing demand of AI and datacenters.”

   Check this
3. 2024-03-26
   LoosensCapacityUS

   Wolfspeed tops out its $5bn silicon carbide materials plant in Siler City, built for 200 mm wafers.

   WhoWolfspeed

   wolfspeed.com ↗official source

   The sentence that says so

   “Wolfspeed currently produces more than 60% of the world’s silicon carbide materials at its Durham, N.C. headquarters, and is engaged in a $6.5 billion capacity expansion effort to dramatically increase production.”

   Check this

All events →

• Materials qualificationone turn: Years

  Worst judgement on this loop: 11 of 12How this is computedThe highest severity score among the bottlenecks recorded as gates on the loop.Method →Code →Check this number with Ask, judged 2026-09-15

• Circuit boardsone turn: One to two weeks

  Worst judgement on this loop: 8 of 12How this is computedThe highest severity score among the bottlenecks recorded as gates on the loop.Method →Code →Check this number with Ask, judged 2026-09-15

A loop is one design, build and measure turn. Severity is a dated judgement on a 0–12 scale, not a measurement, and the judgements are not added together — the figure shown is the worst single one.

• 200 mm silicon carbide wafersrelieved by

  source-backed readiness judgement