Silicon carbide substrate, 200 mm semi-insulating
A harder-than-silicon crystal used where power and heat are high, such as chargers, motors and radar.
judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed
Searched for “silicon carbide substrate”, “SiC crystal growth”, “200 mm SiC”, “semi-insulating SiC” in titles and abstracts.
39 collected items, newest first ↓Judged by hand ↓Who is active ↓
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Judged by hand
- 200 mm silicon carbide wafers
In production at several makers and expanding; the market is currently oversupplied rather than short.
Collected by the feeds
- Numerical optimization of induction coils structure for TSSG-SiC crystal growth
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Unraveling the defect physics of SiC micropipe sidewalls by non-line-of-sight confocal spectromicroscopy: Amphoteric giant traps
Despite substantial advances in SiC crystal growth, micropipes can still occur in thick and large-diameter SiC wafers, remaining among the most detrimental extended defects associated with device failure. However, the microscopic nature of the defects residing on their internal…
Chung Yuan Christian UniversityNational Central University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Tribochemical and contact-mechanical mechanisms in multi-field-assisted chemical mechanical polishing of silicon carbide substrates
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Investigation of Photoluminescence Black Features in 4H‐SiC Substrates
In recent years, photoluminescence (PL) black features in 4H‐SiC recorded by a surface inspection tool have plagued substrate suppliers, epitaxy and device manufacturers, as both their root causes and adverse effects remain unclear. This study shows that PL blacks correspond to…
United Silicon Carbide (United States)
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Influence of fixed-abrasive diamond multi-wire sawing process on the slicing quality of different types of 200 mm SiC crystal ingots
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Atomistic Insights into SiC Sublimation and Temperature-Dependent Vapor Composition by ReaxFF Molecular Dynamics Simulations
Abstract We developed a ReaxFF force field for silicon carbide (SiC), specifically parametrized to capture complex, temperature-dependent vapor compositions during sublimation. ReaxFF molecular dynamics (MD) simulations of crystalline SiC at 3000–4500 K revealed a diverse range…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Over 600 °C operation of ion-implantation-based SiC bottom-gate JFETs
Silicon carbide (SiC) junction field-effect transistors (JFETs) are promising for high-temperature integrated circuits. However, conventional top-gate structures fabricated in semi-insulating SiC substrates suffer from low threshold voltage (Vth) controllability due to…
Applied / lab · Says "fabricated".From OpenAlex · not yet reviewedDOIPDF
- Modeling and Experimental Investigation of Thermal-Field Regulation in α-SiC Powder Synthesis Using Double-Induction-Coil Heating
High-purity SiC powder is an important feedstock for SiC crystal growth, but thermal-field regulation becomes difficult during large-batch synthesis. This study examined an α-SiC powder-synthesis furnace with upper and lower induction-coil groups through numerical simulations and…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Synchrotron Characterization of Growth-Induced Defects in PVT-Grown 4H-SiC Crystals
The rapid advancement of high-power and high-frequency electronic devices has necessitated the development of superior wide bandgap semiconductor materials. Among these, the 4H polytype of silicon carbide has emerged as the premier candidate due to its exceptional thermal…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedPDF
- High-Performance Ultraviolet Photodetectors Based on Transition Metal Boride and Carbide Heterostructures on Silicon Carbide Substrates
UV photodetectors are essential for applications like environmental sensing, flame detection, and aerospace systems. Nevertheless, the performance of traditional silicon-based detectors is limited by their narrow bandgap, necessitating optical filtering, raising dark current, and…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Mechanics-Based Prediction of Total Thickness Variation in Silicon Carbide Substrates During Precision Grinding Based on an Equivalent Wheel-Deflection Model
Abstract Precision grinding is a key technology for thinning silicon carbide substrates. However, the surface accuracy often deteriorates due to total thickness variation (TTV), which critically affects subsequent device fabrication and packaging. Existing research primarily…
Dalian University of TechnologySuzhou University of Science and Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Optical Access to the Electronic Nature of Device-Relevant Dislocations in High-Purity Semi-Insulating SiC
High-purity semi-insulating silicon carbide (HPSI-SiC) is a high-end substrate for power devices. However, both electrical and optical characterization of threading dislocations (TDs) remains challenging because of its low free-carrier concentration and abundant compensating…
Chung Yuan Christian UniversityNational Central UniversitySemiconductor Research Corporation
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Numerical modeling of the thermal field and chemistry assessment of SiC crystal growth in PVT furnaces
Silicon carbide (SiC) is a key material for high-power, high-temperature, and high-frequency applications. The physical vapor transport (PVT) method remains the leading approach for growing high-quality SiC crystals. Numerical modeling is essential for understanding and…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Micropipe annihilation in 4H-SiC crystal growth elicited by Si droplet: mechanistic insights and applications in growth control
Xiamen UniversityHefei University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Strain Relief of Silicon Carbide Substrates(4H-SiC) by Wet Etching
Strain relief etching is a critical wet process technique use in high volume manufacturing of semiconductor substrates and device wafers. The goal of a strain relief etch is application dependent but can generally be considered for removal of warp/bow or improving mechanical…
RENA Technologies (Germany)University of Warwick
Pilot / demonstration · Says "high volume manufacturing" and has an author at a company.From OpenAlex · not yet reviewedDOI
- Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
We report on the development and systematic validation of an ultra-pure silicon carbide (SiC) source material specifically engineered for physical vapor transport (PVT) growth of optical-and electronic-grade single crystals. The material is synthesized by chemical vapor…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
In bulk SiC crystal growth using the PVT method, recrystallization within the source material leads to a decrease in growth rate and source utilization. In this study, numerical simulations were used to investigate the source temperature distribution and its effect on the growth…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal
Seed crystal stabilization during the initial stage of 200-mm 4H-SiC crystal growth is critical for achieving high-quality wafers with large diameters. This study investigated the effects of heating ramp rates (0 - 6 °C/min) and SiC source powder porosity through both simulation…
National Training ServiceDong-Eui University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Effects of crystal shape on the solution flow behavior in the top-seeded solution growth of 4H-SiC single crystals
Zhejiang Sci-Tech UniversityZhejiang University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Filtering and Interfacial Interaction Mechanism of TaC for Carbon Inclusions Suppression in PVT-Grown SiC Crystals
The presence of carbon inclusions, originating from the nonstoichiometric sublimation of source materials, poses a significant challenge to the quality of silicon carbide (SiC) single crystals grown by the physical vapor transport (PVT) method. To address this issue from a…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Study on electrochemical mechanical polishing of silicon carbide substrates with controllable material removal behavior
Electrochemical mechanical polishing (ECMP) shows great potential for improving the polishing efficiency and surface quality of silicon carbide (SiC) substrates. However, due to the complexity of its reaction mechanisms, achieving precise material removal from SiC substrates…
Huaqiao UniversityZhengzhou Institute of Machinery
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Machine learning-accelerated thermodynamic investigation for the evaluation of solvent systems in SiC crystal growth
University of Science and Technology Beijing
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Processing-dependent near-field radiative heat transfer at Au/SiC interfaces
Thermal annealing is a widely used thin-film processing technique for modifying interfacial optical losses and electronic scattering in metals. Here, we investigate how thermal annealing of gold thin films deposited on silicon carbide substrates influences interfacial near-field…
Universidad Nacional Autónoma de México
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- Towards predictive atomistic simulations of SiC crystal growth
Simulations of SiC crystal growth using molecular dynamics (MD) have become popular in recent years. They, however, simulate very fast deposition rates, to reduce computational costs. Therefore, they are more akin to surface sputtering, leading to abnormal growth effects…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular doping, we achieve a low carrier density…
Applied / lab · Says "fabricated".From arXiv · not yet reviewedDOIPDF
- A structural analysis of ordered Cs$_{3}$Sb films grown on single crystal graphene and silicon carbide substrates
Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- Fiammetta - an advanced and energy efficient method for SiC crystal growth
The need for silicon carbide (SIC) has the past years increased dramatically thanks to the advantageous properties of SiC in electric vehicles (EVs), charging posts, and inverters. It is estimated that SiC can save on average 20% of all the electric energy generated today, but…
Fundamental research · Research grant.From OpenAIRE (EU and national funders) · not yet reviewed
- Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed…
Shandong UniversityUniversiti Sains Malaysia
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Optimization of the thermal field of 8-inch SiC crystal growth by PVT method with “3 separation heater method”
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Research progress of large size SiC single crystal materials and devices
Abstract SiC semiconductor is the focus of recent international research. It is also an important raw material for China to achieve carbon emission peak and carbon neutrality. After nearly 20 years of research and development, we focus on the three types SiC crystals, n-type…
Shandong UniversityState Key Laboratory of Crystal Materials
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth
As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single…
Harbin Institute of TechnologyHarbin Electric Corporation (China)
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications
SRM Institute of Science and TechnologyPSG INSTITUTE OF TECHNOLOGY AND APPLIED RESEARCH
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure
The performance of a novel ‘buffer-free’ AlGaN/GaN-on-SiC MISHEMTs for power switching applications is demonstrated in this letter. High voltage operation with exceptionally low gate and drain leakage currents is shown. A specific on-resistance of 3.61 m$\boldsymbol {\Omega }…
Chalmers University of TechnologyLinköping University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Optimization of thermal field of 150 mm SiC crystal growth by PVT method
The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical fields in the growth…
Harbin Institute of TechnologyHeilongjiang Institute of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate
We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential
Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC
Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Controlling doping in graphene through a SiC substrate: A first-principles study
Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming doping difficulty in graphene via substrate…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF