300 mm prime silicon wafers
The polished silicon discs most chips are built on, made by a handful of companies.
judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed
Searched for “300 mm wafer”, “Czochralski silicon”, “silicon wafer defect” in titles and abstracts.
All stagesFundamental researchApplied / labPilot / demonstrationEarly commercialAt scaleNewestMost cited
Directory companies in this research
- IntelINTC USvia Intel1 (Computed: Items per institution per bottleneck, counting each item once per institution named on it by the source; a company is matched to the directory only when every distinguishing word of both names agrees.) itemlatest 2024-05-01
Named on a collected paper or grant, matched to the directory by the strict name rule. A company not in the directory, or spelled differently by the source, is not shown here.
Collected by the feeds
- A Fast Shell-Based Framework for Predicting Chucking-Induced In-Plane Distortion in Silicon Wafers from Measured Out-of-Plane Geometry
In advanced semiconductor manufacturing, in-plane distortion (IPD) of silicon wafers induced by vacuum chucking can compromise overlay accuracy. Out-of-plane deformation (OPD) is measurable by optical methods such as Wave Front Phase Imaging, but predicting the resulting IPD…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A novel six-coil multi-mode magnetic field system: design, spatial distribution and modulation of melt flow and oxygen transport in 300 mm Czochralski silicon growth
300 mm Czochralski (Cz)-grown silicon single crystals have become the dominant substrate material for advanced integrated circuit manufacturing. However, conventional fixed-geometry transverse magnetic field (TMF) and cusp magnetic field (CMF) systems widely used in traditional…
Chinese Academy of SciencesFudan UniversityShanghai Institute of Microsystem and Information Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Cusp-magnetic-field process window optimization for oxygen and vacancy–oxygen defect control in photovoltaic Czochralski silicon growth
High-quality Czochralski silicon (CZ-Si) for photovoltaic applications requires coordinated control of oxygen incorporation, interfacial transport, and vacancy-oxygen defect evolution during crystal growth. In this work, a coupled thermo-flow-oxygen-defect multiphysics model…
Kunming University of Science and TechnologyYunnan Metallurgical Group (China)Yunnan University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A Wafer-Level Alignment for 3D IC Hybrid Bonding Based on Quality-Aware Observation and Adaptive Full-Field Robust Estimation
Wafer-level hybrid bonding has become a key path for continued scaling of 3D integrated circuits, yet its yield is governed by the post-bond full-field residual overlay vector field rather than by any single scalar “alignment accuracy”. Existing alignment algorithms suffer from…
Guangdong University of Science and Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIalso at doi.org
- CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C
Boron-doped Czochralski silicon samples with [B] approximately 10(17) cm-3 have been heated at various temperatures in the range 800-1300-degrees-C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Investigation of bottom heat leakage in a Czochralski silicon furnace under different susceptor thermophysical properties
Kunming University of Science and TechnologyYunnan Metallurgical Group (China)Yunnan Vocational College of Mechanical and Electrical TechnologyQujing Normal University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Integrated COMSOL–machine-learning–SHAP Framework for thermal-field optimization and interface stability analysis in Czochralski silicon growth
Fuel Cells and HydrogenNational Chin-Yi University of TechnologyBu-Ali Sina University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Emission Behavior of SF6 and NF3 in Etching Processes: Effects of Wafer Size and Plasma Intensity
Accurate estimation of greenhouse gas (GHG) emissions from semiconductor etching processes requires process-specific information on the unreacted fraction (1−Ui) of process gases and the by-product generation rate (Bi). However, the default emission factors provided in the 2019…
Sejong UniversityDuksung Women's UniversityKorea Testing & Research Institute
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Defect engineering in Czochralski silicon through tin-doping: A perspective from tin-vacancy-oxygen interactions
Grown-in defects such as voids and oxide precipitates critically affect the performance of Czochralski (CZ) silicon wafers. In this work, the effects of tin (Sn)-doping on vacancy-related defect evolution in CZ silicon are investigated using first-principles calculations…
Zhejiang UniversityShaoxing University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Diffusion‐Driven Macromolecular Self‐Organization Enables Conformal Perovskite/Silicon Tandems
ABSTRACT Industrial deployment of perovskite/silicon tandem solar cells is limited by the difficulty of forming thick, defect‐controlled wide‐bandgap (WBG) perovskite layers that conformally coat micron‐textured silicon while retaining interfacial passivation. Here, we introduce…
Chinese Academy of SciencesXiamen Institute of Rare-earth MaterialsFujian Institute of Research on the Structure of MatterFujian Agriculture and Forestry UniversityUniversity of Chinese Academy of Sciences+2 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Heating zone lifting and heater structure optimization for oxygen control in 300-mm czochralski silicon growth under a transverse magnetic field
Shanghai Fudan Microelectronics (China)Shanghai Institute of Microsystem and Information Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Silicon Photonic Paper-Clip Spiral Waveguides With Ultra-Low Propagation and Delay Loss
In this work, we demonstrate compact paper-clip spiral silicon photonic waveguides with ultra-low delay loss on a 300 mm-wafer foundry platform. We characterize the optical loss and group delay of single-mode and multi-mode silicon waveguides across the telecom O-, S-, C-, and…
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOI
- Impurity concentration prediction of Czochralski silicon based on domain-adversarial transfer learning: Physical consistency and cross-furnace adaptability study
This study presents a domain-adversarial transfer learning (DATL) framework for the precise prediction and control of impurity concentrations in Czochralski silicon, directly addressing the persistent challenges of data scarcity, poor model transferability, and limited robustness…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- RL-optimized knowledge distillation for interpretable soft sensing of crystal quality in Czochralski silicon growth via wavelet dual-stream iTransformer–MKAN
Xi'an University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Vortex-mediated oxygen transport and defect suppression in 300 mm Czochralski silicon: The role of vertically asymmetric magnetic field
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Effect of Iron Contamination on the Electrical Properties and Nucleation of Oxygen Precipitates in Ga‐Doped Continuously Czochralski Silicon
Ga‐doped continuously Czochralski silicon (CCz‐Si) is promising for p‐type silicon solar cells due to its superior axial resistivity uniformity, high productivity, and immunity to light‐induced degradation (LID). However, multiple crucibles designing and prolonged operation…
Zhejiang UniversityShaoxing University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Effects of radiative and conductive heat transfer of heat shield on heat flow and heating power during Czochralski silicon crystal growth
Energy saving in Czochralski (CZ) silicon growth is of great significance for the cost reduction of photovoltaic power generation. As a critical component of the CZ furnace, the heat shield directly influences the heat flow transport within the CZ furnace and subsequently affects…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Power-law transient leakage in Czochralski silicon pn-junctions: Dispersive transport induced by exponential trap distributions
We propose an analytical model for the power-law transient leakage current observed in pn-junctions fabricated in Czochralski silicon (Cz-Si). The model assumes an exponential distribution of trap states within the bandgap, attributed to oxygen-related defects. The transient…
Applied / lab · Says "fabricated".From OpenAlex · not yet reviewedDOI
- Highly scaled CGeSbTe phase change material spacer for high-density phase change memory integration on 300mm wafer
The progression of next-generation computing architectures has significantly increased the demand for advanced high-performance memory solutions. Among these, phase change memory (PCM) has emerged as a promising candidate for storage class memory (SCM) technologies. Nonetheless…
Chinese Academy of SciencesShanghai Institute of Microsystem and Information TechnologyUniversity of Chinese Academy of Sciences
Applied / lab · Says "fabricated".From OpenAlex · not yet reviewedDOIPDF
- Numerical Investigation of a Segmented Water Jacket for 400 mm Czochralski Silicon Single Crystal Growth
ASA CollegeSri Sivasubramaniya Nadar College of EngineeringNagoya University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Point defect-dominated ring defect formation limiting TOPCon solar cell performance in low-oxygen Cz Silicon
High-efficiency tunnel oxide passivating contact (TOPCon) solar cells have matured as an industrial technology, yet their performance is compromised by edge ring-like defects whose formation mechanism remains incompletely understood. In this work, we demonstrate that in current…
Zhejiang UniversityGreen Technology
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOIPDF
- Interfacial dopant transport mechanisms and resistivity control in Czochralski silicon growth under a transverse magnetic field
Chinese Academy of SciencesShanghai Institute of Microsystem and Information TechnologyFudan University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Coupled Effects of Magnetic Damping and Pulling Speed on Defect Formation in 3D Czochralski Silicon Growth
Fuel Cells and HydrogenNational Chin-Yi University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- High-fidelity dispersive spin sensing in a tunable unit cell of silicon MOS quantum dots
Metal-oxide-semiconductor (MOS) technology offers a promising route to scalable quantum computing based on spin qubits, but large-scale architectures require compact and sensitive sensors that preserve qubit connectivity and remain compatible with industrial fabrication. Here we…
London Centre for NanotechnologyQuantum Motion Technologies (United Kingdom)University College LondonRIKEN Center for Emergent Matter ScienceUniversity of Cambridge+3 more
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOIPDF
- Wafer-Scale MOCVD Integration of 2D Materials for CMOS Applications and Beyond
The growing computational demands of edge computing and AI applications are pushing semiconductor technologies to their physical and architectural limits, particularly in power efficiency and memory integration. Two-dimensional (2D) layered materials, with their unique…
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOI
- Transparent and mechanically flexible wafer-scale silicon-photonics fabrication platform
Silicon photonics has benefited greatly from wafer-scale fabrication, with very-large-scale integration enabling systems for diverse applications, including data communications, LiDAR sensing, and quantum computing and sensing. However, the vast majority of these systems are…
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOI
- Evolution and distribution of thermal stress during the shouldering stage of Czochralski silicon growth: Effects on defect dynamics and strategies for process optimization
The shouldering stage in the Czochralski (CZ) method, a critical unsteady phase preceding constant-diameter growth, has received limited research attention. In this work, the evolution of thermal stress and defect distribution during the shouldering stage are comprehensively…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Improved Langevin Surrogate-Assisted Process-Parameter Optimization for Candidate Recipe Generation in Czochralski Silicon Single Crystal Growth
To support offline process-parameter screening for Czochralski (CZ) silicon single crystal growth, this paper proposes a surrogate-assisted optimization framework based on an improved Langevin evolutionary algorithm. First, a multi-variable constrained optimization model is…
Xi'an University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A current source with metrological precision made on a 300mm silicon MOS process
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such sources must be operated in parallel to…
Applied / lab · Says "fabricated".From arXiv · not yet reviewedPDF
- High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- 300 mm Wafer-Scale SiN Platform for Broadband Soliton Microcombs Compatible with Alkali Atomic References
Chip-integrated optical frequency combs (OFCs) based on Kerr nonlinear resonators are of great significance given their scalability and wide range of applications. Broadband on-chip OFCs reaching visible wavelengths are especially valuable as they address atomic clock transitions…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity while being industrially manufacturable…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- Highly Uniform Thermally Undercut Silicon Photonic Devices in a 300 mm CMOS Foundry Process
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to fabrication variations and operational…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- Perovskite/Silicon Tandem Solar Cells Above 30% Conversion Efficiency on Submicron-Sized Textured Czochralski-Silicon Bottom Cells with Improved Hole-Transport Layers
High Resolution Image Download MS PowerPoint Slide In perovskite/silicon tandem solar cells, the utilization of silicon heterojunction (SHJ) solar cells as bottom cells is one of the most promising concepts. Here, we present optimization strategies for the top cell processing and…
Helmholtz-Zentrum Berlin für Materialien und EnergieÉcole Polytechnique Fédérale de LausanneSwiss Center for Electronics and Microtechnology (Switzerland)
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Industrial 300$\,$mm wafer processed spin qubits in natural silicon/silicon-germanium
The realisation of an universal quantum computer will require the operation of thousands to millions of qubits. The possibility of using existing industrial semiconductor fabrication techniques and infrastructure for up-scaling and reproducibility makes silicon based spin qubits…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDFalso at doi.org
- Advanced CMOS manufacturing of superconducting qubits on 300 mm wafers
Abstract The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers 1,2 . As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical…
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOIPDF
- Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Surface Molecular Engineering for Fully Textured Perovskite/Silicon Tandem Solar Cells
Developing large-scale monolithic perovskite/silicon tandem devices based on industrial Czochralski silicon wafers will likely have to adopt double-side textured architecture, given their optical benefits and low manufacturing costs. However, the surface engineering strategies…
Jiangxi University of Water Resources and Electric PowerNanchang UniversityMaxwell Technologies (United States)CNPC Tubular Goods Research Institute (China)China National Petroleum Corporation (China)+3 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Probing single electrons across 300-mm spin qubit wafers
Abstract Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid-state electronic devices 1–3 , integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable…
Intel (United States)Intel in the directoryINTC USvia Intel
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To…
Applied / lab · Says "fabricated".From arXiv · not yet reviewedDOIPDF
- Low-Loss Silicon Directional Coupler with Arbitrary Coupling Ratios for Broadband Wavelength Operation Based on Bent Waveguides
We demonstrate a design for a high-performance $2 \times 2$ splitter meeting the essential requirements of broadband coupling, support for arbitrary coupling ratio, ultra low-loss, high fabrication tolerance, and a compact footprint. This is achieved based on a rigorous coupled…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth
During silicon crystal growth, oxygen, a well-known major impurity, affects the final silicon wafer's mechanical and electrical properties. This study focused on regulation of discharge of different concentrations of oxygen from the quartz crucible into the silicon melt while…
National Chin-Yi University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity…
Applied / lab · Says "fabricated".From arXiv · not yet reviewedDOIPDF
- Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects
Understanding surface passivation arising from aluminium oxide (Al2O3) films is of significant relevance for silicon-based solar cells and devices that require negligible surface recombination. This study aims to understand the competing bulk and surface lifetime effects which…
University of WarwickUniversity of Oxford
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOIPDF
- Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedDOIPDF
- Biosensing with Silicon Nitride Microring Resonators Integrated with an On-Chip Filter Bank Spectrometer
Wearable, mobile, and point-of-care (POC) sensors comprise a rapidly expanding field of devices aimed at improving human health by relaying real-time biometric data such as heart rate and glucose levels. The current scope of what these devices can offer healthcare is limited by…
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOI
- Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films
We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO2) thin films grownviaatomic layer deposition (ALD). Plasma-enhanced ALD with O2plasma and a tetrakis(dimethylamido)hafnium precursor was used to deposit 12 nm thick…
University of WarwickUniversity of FreiburgFraunhofer Institute for Solar Energy Systems
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Reactor scale simulations of ALD and ALE: ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor
We have developed a simulation tool to model self-limited processes such as atomic layer deposition and atomic layer etching inside reactors of arbitrary geometry. In this work, we have applied this model to two standard types of cross-flow reactors: a cylindrical reactor and a…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF