300 mm prime silicon wafers
The polished silicon discs most chips are built on, made by a handful of companies.
judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed
Searched for “300 mm wafer”, “Czochralski silicon”, “silicon wafer defect” in titles and abstracts.
All stagesFundamental researchApplied / labPilot / demonstrationEarly commercialAt scaleNewestMost cited
Fundamental research — readiness 1 to 2 of the nine-point scale. Evidence it takes: A paper or preprint on the underlying physics or chemistry; a basic-research grant.
Directory companies in this research
- IntelINTC USvia Intel1 (Computed: Items per institution per bottleneck, counting each item once per institution named on it by the source; a company is matched to the directory only when every distinguishing word of both names agrees.) itemlatest 2024-05-01
Named on a collected paper or grant, matched to the directory by the strict name rule. A company not in the directory, or spelled differently by the source, is not shown here.
Collected by the feeds
- A Fast Shell-Based Framework for Predicting Chucking-Induced In-Plane Distortion in Silicon Wafers from Measured Out-of-Plane Geometry
In advanced semiconductor manufacturing, in-plane distortion (IPD) of silicon wafers induced by vacuum chucking can compromise overlay accuracy. Out-of-plane deformation (OPD) is measurable by optical methods such as Wave Front Phase Imaging, but predicting the resulting IPD…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A novel six-coil multi-mode magnetic field system: design, spatial distribution and modulation of melt flow and oxygen transport in 300 mm Czochralski silicon growth
300 mm Czochralski (Cz)-grown silicon single crystals have become the dominant substrate material for advanced integrated circuit manufacturing. However, conventional fixed-geometry transverse magnetic field (TMF) and cusp magnetic field (CMF) systems widely used in traditional…
Chinese Academy of SciencesFudan UniversityShanghai Institute of Microsystem and Information Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Cusp-magnetic-field process window optimization for oxygen and vacancy–oxygen defect control in photovoltaic Czochralski silicon growth
High-quality Czochralski silicon (CZ-Si) for photovoltaic applications requires coordinated control of oxygen incorporation, interfacial transport, and vacancy-oxygen defect evolution during crystal growth. In this work, a coupled thermo-flow-oxygen-defect multiphysics model…
Kunming University of Science and TechnologyYunnan Metallurgical Group (China)Yunnan University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A Wafer-Level Alignment for 3D IC Hybrid Bonding Based on Quality-Aware Observation and Adaptive Full-Field Robust Estimation
Wafer-level hybrid bonding has become a key path for continued scaling of 3D integrated circuits, yet its yield is governed by the post-bond full-field residual overlay vector field rather than by any single scalar “alignment accuracy”. Existing alignment algorithms suffer from…
Guangdong University of Science and Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIalso at doi.org
- CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C
Boron-doped Czochralski silicon samples with [B] approximately 10(17) cm-3 have been heated at various temperatures in the range 800-1300-degrees-C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Investigation of bottom heat leakage in a Czochralski silicon furnace under different susceptor thermophysical properties
Kunming University of Science and TechnologyYunnan Metallurgical Group (China)Yunnan Vocational College of Mechanical and Electrical TechnologyQujing Normal University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Integrated COMSOL–machine-learning–SHAP Framework for thermal-field optimization and interface stability analysis in Czochralski silicon growth
Fuel Cells and HydrogenNational Chin-Yi University of TechnologyBu-Ali Sina University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Emission Behavior of SF6 and NF3 in Etching Processes: Effects of Wafer Size and Plasma Intensity
Accurate estimation of greenhouse gas (GHG) emissions from semiconductor etching processes requires process-specific information on the unreacted fraction (1−Ui) of process gases and the by-product generation rate (Bi). However, the default emission factors provided in the 2019…
Sejong UniversityDuksung Women's UniversityKorea Testing & Research Institute
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Defect engineering in Czochralski silicon through tin-doping: A perspective from tin-vacancy-oxygen interactions
Grown-in defects such as voids and oxide precipitates critically affect the performance of Czochralski (CZ) silicon wafers. In this work, the effects of tin (Sn)-doping on vacancy-related defect evolution in CZ silicon are investigated using first-principles calculations…
Zhejiang UniversityShaoxing University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Diffusion‐Driven Macromolecular Self‐Organization Enables Conformal Perovskite/Silicon Tandems
ABSTRACT Industrial deployment of perovskite/silicon tandem solar cells is limited by the difficulty of forming thick, defect‐controlled wide‐bandgap (WBG) perovskite layers that conformally coat micron‐textured silicon while retaining interfacial passivation. Here, we introduce…
Chinese Academy of SciencesXiamen Institute of Rare-earth MaterialsFujian Institute of Research on the Structure of MatterFujian Agriculture and Forestry UniversityUniversity of Chinese Academy of Sciences+2 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Heating zone lifting and heater structure optimization for oxygen control in 300-mm czochralski silicon growth under a transverse magnetic field
Shanghai Fudan Microelectronics (China)Shanghai Institute of Microsystem and Information Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Impurity concentration prediction of Czochralski silicon based on domain-adversarial transfer learning: Physical consistency and cross-furnace adaptability study
This study presents a domain-adversarial transfer learning (DATL) framework for the precise prediction and control of impurity concentrations in Czochralski silicon, directly addressing the persistent challenges of data scarcity, poor model transferability, and limited robustness…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- RL-optimized knowledge distillation for interpretable soft sensing of crystal quality in Czochralski silicon growth via wavelet dual-stream iTransformer–MKAN
Xi'an University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Vortex-mediated oxygen transport and defect suppression in 300 mm Czochralski silicon: The role of vertically asymmetric magnetic field
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Effect of Iron Contamination on the Electrical Properties and Nucleation of Oxygen Precipitates in Ga‐Doped Continuously Czochralski Silicon
Ga‐doped continuously Czochralski silicon (CCz‐Si) is promising for p‐type silicon solar cells due to its superior axial resistivity uniformity, high productivity, and immunity to light‐induced degradation (LID). However, multiple crucibles designing and prolonged operation…
Zhejiang UniversityShaoxing University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Effects of radiative and conductive heat transfer of heat shield on heat flow and heating power during Czochralski silicon crystal growth
Energy saving in Czochralski (CZ) silicon growth is of great significance for the cost reduction of photovoltaic power generation. As a critical component of the CZ furnace, the heat shield directly influences the heat flow transport within the CZ furnace and subsequently affects…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Numerical Investigation of a Segmented Water Jacket for 400 mm Czochralski Silicon Single Crystal Growth
ASA CollegeSri Sivasubramaniya Nadar College of EngineeringNagoya University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Interfacial dopant transport mechanisms and resistivity control in Czochralski silicon growth under a transverse magnetic field
Chinese Academy of SciencesShanghai Institute of Microsystem and Information TechnologyFudan University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Coupled Effects of Magnetic Damping and Pulling Speed on Defect Formation in 3D Czochralski Silicon Growth
Fuel Cells and HydrogenNational Chin-Yi University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Evolution and distribution of thermal stress during the shouldering stage of Czochralski silicon growth: Effects on defect dynamics and strategies for process optimization
The shouldering stage in the Czochralski (CZ) method, a critical unsteady phase preceding constant-diameter growth, has received limited research attention. In this work, the evolution of thermal stress and defect distribution during the shouldering stage are comprehensively…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Improved Langevin Surrogate-Assisted Process-Parameter Optimization for Candidate Recipe Generation in Czochralski Silicon Single Crystal Growth
To support offline process-parameter screening for Czochralski (CZ) silicon single crystal growth, this paper proposes a surrogate-assisted optimization framework based on an improved Langevin evolutionary algorithm. First, a multi-variable constrained optimization model is…
Xi'an University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Perovskite/Silicon Tandem Solar Cells Above 30% Conversion Efficiency on Submicron-Sized Textured Czochralski-Silicon Bottom Cells with Improved Hole-Transport Layers
High Resolution Image Download MS PowerPoint Slide In perovskite/silicon tandem solar cells, the utilization of silicon heterojunction (SHJ) solar cells as bottom cells is one of the most promising concepts. Here, we present optimization strategies for the top cell processing and…
Helmholtz-Zentrum Berlin für Materialien und EnergieÉcole Polytechnique Fédérale de LausanneSwiss Center for Electronics and Microtechnology (Switzerland)
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Surface Molecular Engineering for Fully Textured Perovskite/Silicon Tandem Solar Cells
Developing large-scale monolithic perovskite/silicon tandem devices based on industrial Czochralski silicon wafers will likely have to adopt double-side textured architecture, given their optical benefits and low manufacturing costs. However, the surface engineering strategies…
Jiangxi University of Water Resources and Electric PowerNanchang UniversityMaxwell Technologies (United States)CNPC Tubular Goods Research Institute (China)China National Petroleum Corporation (China)+3 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Probing single electrons across 300-mm spin qubit wafers
Abstract Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid-state electronic devices 1–3 , integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable…
Intel (United States)Intel in the directoryINTC USvia Intel
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth
During silicon crystal growth, oxygen, a well-known major impurity, affects the final silicon wafer's mechanical and electrical properties. This study focused on regulation of discharge of different concentrations of oxygen from the quartz crucible into the silicon melt while…
National Chin-Yi University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films
We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO2) thin films grownviaatomic layer deposition (ALD). Plasma-enhanced ALD with O2plasma and a tetrakis(dimethylamido)hafnium precursor was used to deposit 12 nm thick…
University of WarwickUniversity of FreiburgFraunhofer Institute for Solar Energy Systems
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Reactor scale simulations of ALD and ALE: ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor
We have developed a simulation tool to model self-limited processes such as atomic layer deposition and atomic layer etching inside reactors of arbitrary geometry. In this work, we have applied this model to two standard types of cross-flow reactors: a cylindrical reactor and a…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF