Leading-edge foundry capacity
Factories that can make chips at the newest generation. A handful exist, and the leader spends tens of billions of dollars a year adding more.
judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed
Searched for “gate-all-around”, “nanosheet transistor”, “backside power delivery”, “CFET” in titles and abstracts.
54 collected items, newest first ↓Judged by hand ↓Who is active ↓
All stagesFundamental researchApplied / labPilot / demonstrationEarly commercialAt scaleNewestMost cited
Judged by hand
- High-numerical-aperture EUV
Past development: ASML says Intel Foundry entered high-volume manufacturing on High-NA-patterned layers in 2026, at yields matching the previous generation. This row said "not yet volume production" until the source was read.
Collected by the feeds
- ADVANCED FABRICATION AND ENGINEERING OF TWO-DIMENSIONAL TRANSITION METAL DICHALCOGENIDES TRANSISTORS
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have garnered considerable attention in the past decade as one of the most promising channel materials for the next-generation electronic devices owing to their ultimate scaling capability with the atomic body thickness…
Applied / lab · Says "fabricated".From OpenAlex · not yet reviewedDOI
- Electrostatic and Radio Frequency Performance Optimization of a Triple Metal Gate Hybrid Nanowire Metal Oxide Semiconductor Field Effect Transistor
This paper presents a simulated study on a 2D Asymmetric Gate Stack-Triple Metal Gate-All-Around (AGS-TM-GAA) Nanowire MOSFET with a SiGe-Ge-InGaAs hybrid channel, multi-work function metal gates, and optimally structured high-k dielectric stack (TiO2/Hf O2/Si3N4). The device has…
Koneru Lakshmaiah Education Foundation
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Data-Driven Modeling and Circuit-Aware Optimization of Gate-All-Around Multi-Bridge Channel FETs
Aggressive semiconductor scaling toward sub-3 nm technology nodes requires advanced device optimization frameworks capable of efficiently exploring high-dimensional electrostatic design spaces while preserving physics accuracy and circuit-level applicability. Conventional…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Breaking the Drivability-Threshold-Voltage Trade-off in 40 nm Vertical Gate-All-Around Oxide FETs via Spacer-Defined Offset Engineering
Abstract Spacer-defined offset engineering is presented as a structural strategy to enhance the on-state current (ION) of vertical gate-all-around (VGAA) amorphous indium–gallium oxide (IGO) field-effect transistors (FETs) while preserving threshold-voltage (VTH) control…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Enhancing SRAM design with a novel staggered-gate CFET: A path to area reduction and performance optimization
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Exploration and Analysis of Biomolecule Incorporated GaN Based Cylindrical Gate All Around FET for High Performance Biosensing Applications
Birla Institute of Technology, MesraUnited Arab Emirates University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Performance Enhancement of Complementary FETs and Circuits via a Hybrid Dual-κ Spacer Strategy at Sub-1 nm Node
The complementary field-effect transistor (CFET) is considered the most promising structure at sub-1 nm node for denser integration through vertical stacking of n/pFETs. However, large parasitic capacitance and resistance remain severe restrains of device performance. In this…
Chinese Academy of SciencesInstitute of MicroelectronicsUniversity of Chinese Academy of SciencesZhejiang University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Advanced Scaling, Design Economics, and Commercialization Pathways for Nanosheet Transistors in Next-Generation Semiconductor Systems
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIalso at doi.org
- Functionalization-Free Atomic Layer Deposition of Sub-1 nm EOT HfO2 Directly on MoS2 for Gate-All-Around Field-Effect Transistors
Abstract Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose…
National Yang Ming Chiao Tung UniversityNational Development and Research InstitutesNational Institute of Nursing ResearchUniversity of California, San FranciscoUniversity of California System+1 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET
Abstract In this study, a heterojunction gate-all-around nanowire tunnel field-effect transistor (HJ-GAA-NWTFET) with a channel length of 100 nm is designed, attaining a high ION/IOFF ratio of approximately 1013 and an exceptionally low off-state current (IOFF) of around 10-19 A…
Lovely Professional UniversityKIIT UniversityIndian Institute of Technology BHUBanaras Hindu University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- High–Performance and Low–Power Complementary Transistors Based on Red Carbon Ribbon
Due to significant progress in architecture through the vertical stacking of negative channel metal oxide semiconductor (MOS) and positive channel MOS devices, the complementary field–effect transistor (CFET) is regarded as one of the most promising technologies for the next…
Chongqing University of Science and TechnologyJiangxi University of Science and TechnologyChongqing University of TechnologyMinzu University of China
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- DFT-Informed TCAD Screening of Hf-Based High-κ Dielectrics for Gate-All-Around Nanosheet FETs
Abstract In gate-all-around (GAA) nanosheet field-effect transistors (NSFETs), a higher dielectric constant produces a larger physical high-κ thickness for a given equivalent oxide thickness (EOT), lowering direct tunnelling across the gate that wraps each stacked sheet. This…
Vellore Institute of Technology University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- AI for Science with GPT-6 Astra: Thermal Design and Electrothermal Analysis of 2D CFET
Thermal optimization of 2D CFET inverters requires testing structural proposals against their electrical costs. We examine these research tasks using an AI agent workflow within a supplied electrothermal model. At 12 nm, Astra selects a redistributed source-interconnect geometry…
Ulsan National Institute of Science and TechnologyNational University of SingaporeCornell UniversityEindhoven University of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedPDF
- FROM PMOS TO CFET: A COMPREHENSIVE SYSTEMATIC REVIEW AND COMPARATIVE ANALYSIS OF MOSFET-BASED DEVICE ARCHITECTURES FOR NEXT-GENERATION VLSI SYSTEMS
The relentless drive toward transistor miniaturization that has sustained Moore's Law for over five decades has forced the semiconductor industry through a succession of device-architecture transitions, each addressing the electrostatic and parasitic limitations of its…
Kamla Nehru Institute of TechnologyMaharana Pratap University of Agriculture and TechnologyDeen Dayal Upadhyaya Gorakhpur UniversityNoida International University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability
Complementary FETs (CFETs) extend nanosheet FET (NSFET) scaling by vertically stacking n- and p-type gate-all-around (GAA) devices, thereby shrinking standard-cell area. The performance gain, however, cannot be assessed from device metrics alone, as CFET layouts also introduce…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- ML-assisted Design Technology Co-Optimization Framework for Advanced Process Nodes: Analysis and Exploration of DTCO Parameters using PPA of Digital Blocks
Design and technology co-optimization (DTCO) is the process of optimizing technology and design concurrently to enhance the performance, power, and area (PPA) of semiconductors, in which an essential ingredient is to evaluate technologies, design rules, and cell architectures…
Seoul National UniversityNew Generation University CollegeSungkyunkwan University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- TCAD simulation study of a ZnO-based dopingless gate-all-around nanowire junctionless FET exhibiting negative photoresponse for UV photodetection
Indian Institute of Information Technology Design and Manufacturing Jabalpur
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration
The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we…
Applied / lab · Says "we demonstrate".From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- Experimental Characterization of Omega-Gate Nanowire Transistors Across a Wide gm/I D Range for Low-Dropout Regulator Design
Abstract In this work, a low dropout voltage regulator (LDO) was designed using omega-gate nanowire transistors, following the transistor efficiency (gm/I D ) design methodology. These transistors were experimentally characterized and modeled using a Look-Up Table (LUT) approach…
Universidade Estadual Paulista (Unesp)Universidade de São Paulo
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Wafer-Level 1/f Noise Characterization of Scaled P-Type Nanosheets and Comparison with Planar HKMG Transistors
We present a comprehensive wafer-level 1/f noise study of scaled Gate-All-Around (GAA) p-type nanosheet transistors and benchmark them against large-area planar High- \k{appa} Metal Gate (HKMG) devices to assess the impact of device architecture on reliability. By statistically…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Unveiling the Scaling Potential of Drain Merge through Active (DMtA) in CFETs: Breaking the Super-Via Bottlenecks and Unlocking New PPA Boosters
Drain merge (DM), a super via vertically connecting the common S/D terminals of stacked n/pFETs in Complementary FETs (CFETs), blocks further parasitic optimization and cell scaling. For the first time, this work systematically investigates the state-of-the-art Drain Merge…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- Optimization of work function in triple-metal junctionless dual-gate-all-around MOSFET for nanoscale switching and electrostatic performance
Abstract This paper details the analysis of a Triple-Metal Junctionless Dual-Gate Gate-All-Around MOSFET (7nm channel length) to investigate switching and electrostatic properties. This research examines varying the metal gate work-function between 4.4 eV and 5.0 eV, where 4.6 eV…
Koneru Lakshmaiah Education FoundationAditya Birla (India)Aditya University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- CMOS Scaling to Sub nm Stacked Nanosheet CFETs
Rochester Institute of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Comparative study of silicon and MoTe 2 channel junctionless gate-all-around nanowire FET biosensors based on dielectric modulation
Abstract This paper presents a comparative study of silicon (Si) and molybdenum ditelluride (MoTe 2 ) channel junctionless (JL) gate-all-around (GAA) nanowire field-effect transistor (FET) biosensors employing the dielectric modulation (DM) technique for label-free detection of…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- In-situ Co-Integration of Ru-based Buried Power Rails and nTSVs for Advanced Backside Power Delivery
ABSTRACT The relentless scaling of semiconductor technology necessitates transformative solutions for power delivery networks (PDNs). Backside PDNs have emerged as a promising approach by decoupling power and signal interconnects. However, the integration of key components like…
Hunan UniversitySun Yat-sen UniversityFudan University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Dielectric Pocket and Tri Metal Gate Work Function Tuning for Performance Enhancement of 5 nm Gate All Around Nanowire Field Effect Transistor
This paper presents a simulated study on a 2D Gate-All-Around (GAA) Dielectric Pocket (DP) with a Tri-Metal Nanowire MOSFET, designed to mitigate short-channel effects (SCEs) in 7 nm devices using SOI technology. The proposed architecture incorporates HfO2 dielectric pockets at…
Koneru Lakshmaiah Education FoundationAditya Birla (India)Jawaharlal Nehru Technological University, Kakinada
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Graded buried-oxide engineering in vertically stacked SOI–GAA complementary FETs: a broadband DC and noise investigation
Vertically stacked complementary field-effect transistors (CFETs) offer a promising route to high-density CMOS scaling beyond the 14 nm node, but their tightly coupled architecture introduces parasitic capacitance, interlayer electrostatic coupling, and trap-assisted conduction…
Dayananda Sagar UniversityDr. Hari Singh Gour UniversitySymbiosis International UniversityMadurai Medical CollegeAmerican College, Madurai+2 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Evolution and Analysis of Biomolecule Induced Gate-All-Around CNT FET for Nanoscale Biosensing
National Institute of TechnologyBrainware UniversityUnited Arab Emirates University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- High-Mobility Germanium-on-AlAs Nanosheet FETs and CFET for Adaptive and Ultra-Low-Power Electronics
High-Mobility Germanium-on-AlAs Nanosheet FETs and CFET for Adaptive and Ultra-Low-Power Electronics The continued push toward faster, smaller, and more energy efficient electronics requires new materials and device designs that can operate reliably at extremely small dimensions…
Virginia Polytechnic Institute and State University
Pilot / demonstration · Innovation or demonstration award.From NSF awards · not yet reviewed
- On the static dielectric constant of thin dielectrics in extremely scaled silicon nanosheet transistors
We argue that the static dielectric constant of small (thin and/or narrow) semiconductor and insulator nanostructures depends strongly on the their environment. We do so by considering the electronic response simply reviewing, briefly but critically, the existing literature…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Are gate-all-around 2D CFETs the optimal architecture for the A2 node and beyond?
As logic scaling enters the angstrom era, vertically stacked complementary field-effect transistors (CFETs) based on atomically thin two-dimensional (2D) semiconductors offer a potential route to extend device scaling beyond the A2 node. Here, we develop an A2-oriented 2D CFET…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Valley-Landscape Engineering in Bilayer WSe$_2$ Gate-All-Around Transistors
The K-$Γ$ valence-band splitting $Δ_{KΓ}$ that governs hole transport in few-layer WSe$_2$ is not a fixed material constant. It is tuned by interlayer stacking, strain, pressure, and the dielectric and displacement-field environment. Its computed value also depends on the level…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Self-Heating and Parasitic Effects in Multi-Tier CFET Design
In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the 4-tier CFET design with the…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes. However, the drain-current in GAAFETs strongly…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedPDF
- Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links selective epitaxial growth (SEG) parameters to…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Scaling Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of nanometers to meet density targets. Monolayer…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Channel-last gate-all-around nanosheet oxide semiconductor transistors
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performance for low-power electronics. In advanced transistor architectures, such as gate-all-around…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor
We theoretically investigated the readout process of a spin--qubit structure based on a gate-all-around (GAA) transistor. Our study focuses on a logical qubit composed of two physical qubits. Different spin configurations result in different charge distributions, which…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Device-Scale Atomistic Simulations of Heat Transport in Advanced Field-Effect Transistors
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect transistors. Built upon the…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a fundamental challenge, as the…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedDOIPDF
- 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-limiting fabrication…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedDOIPDF
- Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design
In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha particle radiation…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin Film Transistors
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced. Dual-gate and gate-all-around geometries are…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- PRIME: Physics-Related Intelligent Mixture of Experts for Transistor Characteristics Prediction
In recent years, machine learning has been extensively applied to data prediction during process ramp-up, with a particular focus on transistor characteristics for circuit design and manufacture. However, capturing the nonlinear current response across multiple operating regions…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
The growing demand for better performance and lower thermal energy dissipation in nanoelectronic devices is the major driving force of the semiconductor industry's quest for future generations of nanotransistors. Over the past 15 years, the miniaturization of silicon-based…
Applied / lab · Says "we demonstrate".From arXiv · not yet reviewedDOIPDF
- Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration
Peking UniversityBeijing National Laboratory for Molecular SciencesBeijing Graphene InstituteChinese Academy of SciencesShenzhen Institutes of Advanced Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Van der Waals polarity-engineered 3D integration of 2D complementary logic
Abstract Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1–3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional…
University of Science and Technology of ChinaChinese Academy of SciencesShenyang National Laboratory for Materials ScienceShandong UniversityUniversity of Chinese Academy of Sciences+7 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology
After more than five decades, Moore's Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D transistors…
Guangdong Greater Bay Area Institute of Integrated Circuit and SystemChinese Academy of SciencesInstitute of MicroelectronicsBeijing Academy of Science and TechnologyShanxi Normal University+2 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- New structure transistors for advanced technology node CMOS ICs
Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits (ICs) have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate…
Chinese Academy of SciencesInstitute of MicroelectronicsUniversity of Chinese Academy of Sciences
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- A Review of the Gate-All-Around Nanosheet FET Process Opportunities
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel geometry on the overall device performance…
Albany Molecular Research (United States)
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits
Abstract Large‐area 2D‐material‐based devices may find applications as sensor or photonics devices or can be incorporated in the back end of line (BEOL) to provide additional functionality. The introduction of highly scaled 2D‐based circuits for high‐performance logic…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node
In this article, FinFET, vertically stacked gate-all-around (GAA) nanowire (NW), and nanosheet (NS) FETs performance are estimated with equal effective channel widths (${W}_{eff}$) at the 5-nm technology node (N5). The comparison reveals that NS FET exhibits the highest ON…
National Institute of Technology Warangal
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET
For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET), which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to standard CMOS with nanosheet FETs in perspective of CMOS inverter performance. The comparative study on…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF