Ruthenium, sputtering and ALD grade
A rare metal being adopted for the wiring inside advanced chips. It comes out of the ground only alongside platinum.
judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed
Searched for “ruthenium interconnect”, “ruthenium atomic layer deposition”, “Ru interconnect” in titles and abstracts.
All stagesFundamental researchApplied / labPilot / demonstrationEarly commercialAt scaleNewestMost cited
Fundamental research — readiness 1 to 2 of the nine-point scale. Evidence it takes: A paper or preprint on the underlying physics or chemistry; a basic-research grant.
Directory companies in this research
- Lam ResearchLRCX US1 (Computed: Items per institution per bottleneck, counting each item once per institution named on it by the source; a company is matched to the directory only when every distinguishing word of both names agrees.) itemlatest 2023-04-10
- Samsung Electronics005930 KSvia Samsung Electronics1 (Computed: Items per institution per bottleneck, counting each item once per institution named on it by the source; a company is matched to the directory only when every distinguishing word of both names agrees.) itemlatest 2026-07-16
Named on a collected paper or grant, matched to the directory by the strict name rule. A company not in the directory, or spelled differently by the source, is not shown here.
Collected by the feeds
- Orientation-controlled area-selective deposition of near-single-grain ruthenium interconnects
Samsung (South Korea)Samsung Electronics in the directory005930 KSvia Samsung ElectronicsYonsei UniversityIncheon National UniversityHanyang University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Electrochemical Deposition of Ruthenium Films Using Non-Aqueous Electrolytes for All-Ruthenium Interconnects
Metallic ruthenium is one of the most promising candidates for the realization of innovative electrical interconnects in microelectronic applications [1]. Full ruthenium interconnects offer key advantages at advanced technology nodes by enabling lower effective resistance at very…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Synergistic mechanism between 1,2,4-triazole and nicotinic acid as eco-friendly inhibitors of micro-galvanic corrosion for copper/ruthenium interconnect in chemical mechanical polishing
Micro-galvanic corrosion at the Cu/Ru interface during chemical mechanical polishing (CMP) poses a critical challenge for advanced interconnect fabrication, as conventional single-component inhibitors cannot simultaneously protect both metals with substantially different surface…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Coupled Roles of Surface Chemistry and Hydrogen-Assisted Cycling in Ruthenium Atomic Layer Deposition on Silicon Oxides
High Resolution Image Download MS PowerPoint Slide Ruthenium (Ru) is a promising interconnect material for advanced semiconductor technologies due to its favorable scaling characteristics, including a short electron mean free path and strong electromigration resistance. In…
Material Sciences (United States)Department of Chemistry and Material SciencesStony Brook UniversityBrookhaven National LaboratoryCenter for Functional Nanomaterials
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Ru-Based Interconnects for Memristor Crossbars
Abstract The development of artificial synapses in the form of memristors can facilitate the creation of powerful, scalable, and efficient neuromorphic systems. The size of filament memristors can be reduced to a few nanometers. The density of elements in the memristor crossbar…
Kurchatov InstituteMoscow Power Engineering Institute
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Role of surface states and band modulations in ultrathin ruthenium interconnects
Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based interconnects face a critical challenge, that their resistivity sharply increases at the nanometer-scale…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at doi.orgalso at arxiv.org
- First-principles-informed unified transport model for resolving parameter non-identifiability in sub-10 nm ruthenium interconnects
A DFT-anchored unified transport model resolves parameter non-identifiability and links surface, grain-boundary, and quantum-confinement scattering in sub-10 nm Ru interconnects.
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Enhanced functional properties of ABC-type atomic layer deposited Ru thin films for advanced Cu alternative nanoscale interconnects
An- ABC-type Ru ALD process with NH 3 addition at 310 °C enhanced Ru thin films: ∼100% step coverage, 1.2 nm roughness, 12.3 g cm −3 density, 13.4 µΩ cm resistivity and 0.3 at% impurities enabling high-quality Ru interconnects.
Ulsan National Institute of Science and TechnologyHongik UniversityKorea Basic Science InstituteSeoul Semiconductor (South Korea)Hanyang University+1 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Molecularly tailored SAMs for Ru interconnects: high-temperature stability, suppressed metal diffusion, and enhanced adhesion
The miniaturization of integrated circuits (ICs) necessitates alternative diffusion barriers with reduced electrical resistance to mitigate the RC delay effect. Self-assembled monolayers (SAMs), with their molecular-scale thickness (1–2 nm), offer a promising solution for…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- A distribution-dependent grain size measurement for the accurate property prediction of ruthenium interconnects
Seoul National UniversityInha University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition
Precise control over thin film thickness and noncorrosive byproducts is crucial for semiconductor-device barrier layers. While atomic layer deposition (ALD) is widely used for conformal films, its application to niobium carbide (NbC) remains underdeveloped. This study presents…
Ulsan National Institute of Science and TechnologyDaegu Gyeongbuk Institute of Science and TechnologyKorea Basic Science InstituteGyeongguk National UniversityIncheon National University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- The Role of Polycrystalline MoS2 as Diffusion Barrier in Ru Interconnects: Thermal Stability and Electrical Performances
This study investigates the potential of polycrystalline MoS 2 as a diffusion barrier for Ru interconnects using in situ transmission electron microscopy (TEM) to assess its performance. By examining TEM diffraction and imaging, we evaluate the effectiveness of MoS 2 in…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Corrosion-Inhibited and High-Quality Planarization of Cu/Ru Interconnect by Electrochemical Mechanical Polishing
Harbin Institute of TechnologyUniversity of Bath
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Enhanced nucleation mechanism in ruthenium atomic layer deposition: Exploring surface termination and precursor ligand effects with RuCpEt(CO)2
Miniaturization of microelectronic devices necessitates atomic precision in manufacturing techniques, particularly in the deposition of thin films. Atomic layer deposition (ALD) is recognized for its precision in controlling film thickness and composition on intricate…
Stanford UniversityYonsei University
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Unleashing the Power of 2D MoS2: In Situ TEM Study of Its Potential as Diffusion Barriers in Ru Interconnects
This study presents the utilization of MoS 2 as a diffusion barrier for metal interconnects, in situ transmission electron microscopy (TEM) observations are employed for comprehensive understanding. The diffusion-blocking ability of MoS 2 is discussed by the diffusion and phase…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- 300 mm-wafer metrology for area-selective deposition in nanoscale patterns: A case study for ruthenium atomic layer deposition
IMECKU LeuvenLam Research (United States)Lam Research in the directoryLRCX USNova Measuring Instruments (Israel)
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Atomic Layer Deposited RuO2 Diffusion Barrier for Next Generation Ru‐Interconnects
Abstract Atomic layer deposition (ALD) is a suitable technology for conformally depositing thin films on nanometer‐scale 3D structures. RuO2 is a promising diffusion barrier for Ru interconnects owing to its compatibility with Ru ALD and its remarkable diffusion barrier…
Yeungnam UniversityInstitute of Chemical TechnologyKorea Research Institute of Chemical TechnologyKorea Basic Science Institute
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique
Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor…
Korea UniversityKorea Institute of Science and Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits
Ruthenium may replace copper interconnects in next-generation very-large-scale integration (VLSI) circuits. However, interfacial bonding between Ru interconnect wires and surrounding dielectrics must be optimized to reduce thermal boundary resistance (TBR) for thermal management…
Waseda UniversityToyo UniversityMeiji UniversityNational Institute for Materials ScienceNational Institute of Advanced Industrial Science and Technology+2 more
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Epitaxial metals for interconnects beyond Cu
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Finite Size Effects in Highly Scaled Ruthenium Interconnects
Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF