EUV lithography scanners
The machines that print the finest circuit patterns. One company on earth builds them.
judged, with a citation claimed, no citationNumber: papers, preprints and grants the feeds collected — unreviewed
Searched for “EUV lithography”, “extreme ultraviolet lithography”, “EUV scanner”, “EUV source” in titles and abstracts.
All stagesFundamental researchApplied / labPilot / demonstrationEarly commercialAt scaleNewestMost cited
Fundamental research — readiness 1 to 2 of the nine-point scale. Evidence it takes: A paper or preprint on the underlying physics or chemistry; a basic-research grant.
Directory companies in this research
- ASMLASML NA1 (Computed: Items per institution per bottleneck, counting each item once per institution named on it by the source; a company is matched to the directory only when every distinguishing word of both names agrees.) itemlatest 2024-11-28
Named on a collected paper or grant, matched to the directory by the strict name rule. A company not in the directory, or spelled differently by the source, is not shown here.
Collected by the feeds
- Development of high-precision nickel electroforming process for EUV and x-ray optics
Electroforming is a replication technique that produces metal components with inverse geometries of a mandrel by electrodepositing thick metal layers onto its surface and subsequently separating them. Owing to its superior replication accuracy, this technique is widely used for…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- High conversion efficiency of extreme ultraviolet light generation at 11 nm from a laser-produced Xe plasma
Abstract Laser-produced xenon (Xe) plasma can emit extreme ultraviolet (EUV) radiation around 11.2 nm, which is regarded as a promising candidate for next EUV lithography due to its debris-free, long-term stable fuel supply and easy operation. However, the inherent free expansion…
Changchun University of Science and Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- High-NA in-line projector for EUV lithography
Four-mirror, in-line projector for high-NA EUV lithography is studied in this paper, which eliminates the most troublesome mask 3D effect. The light rays pass through the central aperture in each mirror with acceptable obscuration. The numerical aperture (NA) is 0.5 and 0.55. It…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.org
- Conceptual design and component development of vacuum chamber for OIST-EUV lithography
A novel two-mirror projection optical system for extreme ultraviolet (EUV) lithography, developed at the Okinawa Institute of Science and Technology (OIST), achieves approximately one-tenth of the transmission loss of conventional designs. This reduces the demand for EUV source…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- The ASML Monopoly: Platform and Ecosystem Leadership in EUV Lithography
Scratching the surface of the leading manufacturer of extreme ultraviolet lithography technology used for manufacturing integrated circuits.
Massachusetts Institute of Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Benefits of alternative reticles for high-NA EUV logic metal printing
The introduction of ASML’s EXE:5000 scanner has allowed to keep Moore’s law on track. It uses a Numerical Aperture (NA) of 0.55, which, compared to the 0.33NA of the NXE scanners, allows for a significant increase in resolution and enables the printing of unprecedently small…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Development of low-n/mid-k EUV masks for high-NA lithography
Low‑n absorber materials are considered to be promising candidates for mitigating mask 3D effects in High‑NA EUV lithography. In this study, simulation‑based mask optimization was carried out for line-and-space (L/S) patterns with a 20‑nm pitch to compare Low‑n/Mid‑k and…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- ZERODUR as low-thermal-expansion material in EUV photomask-blank substrates
With the introduction of EUV lithography (EUVL) into mass production, much development effort has been spent on EUVL photomask blanks as well. Whereas much focus is put on reflective multilayer and capping-layer performance improvements, less attention has so far been paid to the…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Selective etching for high-NA EUV mask film stack
As semiconductor devices are shrinking to the sub-nanometer node, next-generation high-NA EUV lithography is required. Next-generation low-n / high-k absorber films used in EUV photomasks contain compositional elements that are notoriously difficult to etch due to their chemical…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Evaluation of accelerated reticle lifetime testing using different applied bias voltages at EBL2
Compatibility of reticles with the EUV scanner environment is important as reticle interactions with EUV photons and EUV-induced hydrogen plasma can result in hydrogen uptake in the reticle. Hydrogen accumulation in the reticle stack can contribute to the formation of blisters…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- 14th eBeam Initiative Annual Luminaries Survey predicts photomask market and equipment growth
The eBeam Initiative completed its 14th annual opinion survey in July 2025 with anonymous feedback from 86 industry luminaries representing 51 companies from across the semiconductor ecosystem – including photomasks, electronic design automation (EDA), chip design, equipment…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Advantages and challenges of actinic inspection systems in EUV mask technology
Leading-edge companies have commenced manufacturing of 2nm products, while the development of next-generation nodes such as A16 and A14 is actively progressing and accelerating. In extreme ultraviolet (EUV) lithography, mask technology plays a critical role in maximizing the…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Current status and challenges of bright field mask technology for high-NA lithography
Leading-edge companies have commenced 2nm product manufacturing, while development of next-generation nodes such as A16 and A14 is actively progressing and accelerating. In EUV lithography, mask technology occupies a very important position and is a critical component for…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- A lab-scale EUV high-intensity exposure setup for small-spot exposures and angular-resolved photoelectron spectroscopy
This work investigates extreme ultraviolet (EUV)-induced photoemission in materials relevant for EUV lithography, combining synchrotron-based X-ray photoelectron spectroscopy (XPS and ARPES) measurements with Monte Carlo photoemission modeling. Gold (Au) is used as a reference…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Parameter optimization of extreme ultraviolet radiation from lithium targets driven by short-wavelength solid-state lasers
Abstract Short-wavelength solid-state lasers are considered promising drivers for next-generation extreme ultraviolet (EUV) lithography sources owing to their compact architecture and high electro-optical conversion effciency. Using a one-dimensional radiation-hydrodynamic model…
University of South ChinaChinese Academy of Sciences
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Characterization of EUV radiation source integrated with a source collector module based on Xe-LPP
Abstract In this paper, extreme ultraviolet (EUV) radiation was generated based on a Xe laser-produced plasma (Xe-LPP) experimental platform, in which helium gas was injected around Xe gas to reduce diffusion. A source collector module (SoCoMo) and two planar molybdenum/silicon…
Seattle Institute of Oriental Medicine
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Design method of a low-angle-of-incidence six-mirror extreme ultraviolet lithography objective system
Extreme ultraviolet lithography (EUVL) objective systems must satisfy multiple constraints. These include high numerical aperture, large field of view, low angle of incidence (AOI), and high image quality. Traditional damped least squares methods are highly dependent on the…
Chinese Academy of SciencesInstitute of Optics and Electronics, Chinese Academy of SciencesUniversity of Chinese Academy of Sciences
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Tunable Positive/Negative Tone Switching in Sn-Based Extreme Ultraviolet Lithography Dry Resists: Mechanism and Sub-7 nm Patterning
As integrated circuit technology scales toward the Angstrom era, the limitations of traditional spin-coated wet photoresists-specifically regarding stochastic defects and pattern collapse-have become critical bottlenecks for high-numerical-aperture extreme ultraviolet (high-NA…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- More is not always better: Dissociative photoionization limits the EUV absorbing photoacid generator pentafluorophenyl triflate in photolithography
Pentafluorophenyl triflate has been explored as a highly absorbing neutral photoacid generator (PAG) candidate for next generation chemically amplified resists used in extreme ultraviolet (EUV) lithography. Although increased fluorination enhances EUV absorption, this study…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDFalso at arxiv.orgalso at doi.org
- Illumination optics design for EUV-lithography
The demanding performance of optical systems for EUV lithography requires new and innovative solutions for the illumination optics design. The illuminator is one of the key components for EUV-lithography. It has to provide uniform illumination across the arc-shaped field and to…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Calculation of a Projection Optical System for Extreme Ultraviolet Lithography
A method for designing optical systems by dividing them into separate groups (frontal, intermediate, and final) with subsequent independent calculation and subsequent coupling, as well as a program for visualizing the initial structure of a projection system for extreme…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Physics-Informed Neural Operator for Warm-Starting Background-Decomposed and Preconditioned PSFD: Enabling Scalable 3-D EUV Mask Simulation
We present a physics-informed neural operator (PINO) trained with pseudo-spectral frequency-domain (PSFD) equations for electromagnetic (EM) scattering problems in EUV lithography. The Fourier neural operator is factorized into a two-dimensional lateral ($xy$) branch and a…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Pseudo-spectral frequency-domain method with background field decomposition and Green's function preconditioner for electromagnetic scattering problem in EUV lithography
We provide an accelerated computational framework to solve electromagnetic scattering problems in planarly layered media arising from extreme ultraviolet (EUV) lithography. To achieve this, we reformulate the EUV scattering problem into a scattering problem on a homogeneous…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Optimization of EUV output by experimentally validated radiation-hydrodynamic simulations across a broad laser parameter space
Practical requirements such as improving wall-plug efficiency and reducing system footprint have become increasingly important with the introduction of extreme ultraviolet (EUV) lithography into high-volume semiconductor manufacturing. These demands motivate the development of…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Wideband Balanced Photodetectors for Classical and Quantum Light Detection from Optical, EUV, to X-rays
The rapid development of coherent short-wavelength light sources in the extreme ultraviolet (EUV) and soft X-ray (SXR) regimes has created a growing need for advanced optoelectronic detection capabilities, particularly for quantum-noise-limited measurements, microelectronics and…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Multi-Diagnostic Characterization of Laser-Produced Tin Plasmas for EUV Lithography
We present a comprehensive characterization of laser-produced tin (Sn) plasmas relevant to extreme ultraviolet (EUV) lithography using a multi-diagnostic suite integrated into the new experimental platform, "SparkLight". Tin plasmas are generated by irradiating a continuously…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Interference-governed electromagnetic-thermal coupling and heat transport in pulse EUV-irradiated multilayer nanofilms
Mo-Si multilayer mirrors are central to extreme ultraviolet lithography, where nanoscale optical interference and heat accumulation together constrain reflectivity and operational stability. Here we develop an analytical electromagnetic-thermal coupling model that directly links…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Lattice design of a storage-ring-based light source for generating high-power fully coherent EUV radiation
We present the physical design and systematic optimization of a high-performance storage ring tailored for the generation of high-power coherent radiation, with particular emphasis on the extreme ultraviolet (EUV) regime. The proposed ring adopts a Double Bend Achromat (DBA)…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Equipment: MRI: Track 2 Acquisition of an Extreme Ultra Violet (EUV) Resist Flood Exposure Tool
Modern life depends on powerful computer chips that run everything from smartphones to medical devices. Making these chips requires creating incredibly small features, far tinier than the width of a human hair. To achieve this, the electronics industry now uses a special kind of…
Fundamental research · Research grant.From NSF awards · not yet reviewed
- Collaborative Research: DMREF: AI-Informed, Closed-Loop Design of Negative Resists for High-Volume EUV Lithography
Non-technical Description: The mass production of integrated circuits (commonly known as ‘microchips’ or simply ‘chips’) is a key driver for modern computational advances. Chip manufacturing requires a process called photolithography to template the intricate patterns of…
University of Illinois at Urbana-Champaign
Fundamental research · Research grant.From NSF awards · not yet reviewedalso at nsf.gov
- Design of an all-facet illuminator for high NA EUV lithography exposure tool based on deep reinforcement learning
Using the illuminator for high numerical aperture (NA) extreme ultraviolet (EUV) exposure tool in EUV lithography can lead to support volume production of sub-2 nm logic nodes and leading-edge DRAM nodes. However, the typical design method of the illuminator has issues with the…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach
Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results in ionization driven chemistry within…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- FMSG: Eco: Solvent-Free Processing of Metal-Imidazolate EUV Photoresists for Semiconductor Manufacturing Guided by Machine Learning
Microelectronic device manufacturing for the production of computer chips depends on lithographic processes. Lithography enables creation of detailed patterns and features needed for making integrated circuits (ICs). This process uses a thin layer of material, called a resist…
Fundamental research · Research grant.From NSF awards · not yet reviewed
- Cavity-based compact light source for extreme ultraviolet lithography
A critical technology for high-volume manufacturing of nanoscale integrated circuits is a high-power extreme ultraviolet (EUV) light source. Over the past decades, laser-produced plasma (LPP) sources have been actively utilized in this field. However, current LPP light sources…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Coherent EUV light source for compact lens-less microscopy and precision metrology
This project aims to revolutionize compact extreme ultraviolet (EUV) radiation sources by developing a novel method for generating coherent and monochromatic EUV pulses with femtosecond duration. We will employ an innovative phase-matching technique for single high-order harmonic…
Fundamental research · Research grant.From OpenAIRE (EU and national funders) · not yet reviewed
- Epsilon Canis Majoris: The Brightest EUV Source with Surprisingly Low Interstellar Absorption
The B2 star $ε$ CMa, at parallax distance $d = 124\pm2$~pc, dominates the H I photoionization of the local interstellar cloud (LIC). At its closer parallax distance compared to previous estimates, $ε$ CMa has a 0.9 mag fainter absolute magnitude $M_V =-3.97\pm0.04$. We combine…
University of ColoradoUniversity of North CarolinaUniversity of Arizona
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedPDF
- Extreme ultraviolet lithography
Paul Scherrer InstituteASML (Netherlands)ASML in the directoryASML NA
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Dissociative photoionization of EUV lithography photoresist models
The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV) synchrotron radiation at 13.5 nm. It was…
Fundamental research · No laboratory or pilot wording.From arXiv · not yet reviewedDOIPDF
- Collaborative Research: Electron-induced Reactivity of Organometallic Precursors for FEBID and Resists for EUV Lithography
With the support of the Macromolecular, Supramolecular and Nanochemistry Program in the Division of Chemistry, Professor Lisa McElwee White of the University of Florida, and Professor Howard Fairbrother of Johns Hopkins University will explore the underlying reactions involved in…
Fundamental research · Research grant.From NSF awards · not yet reviewedalso at nsf.gov
- Radiation-hydrodynamic modelling of next-generation EUV source plasmas for nanolithography (ARIES)
Today’s most advanced computer chips are manufactured by exposing silicon wafers to delicately shaped extreme ultraviolet (EUV) radiation originating from million-degree plasma fireballs. Looking to the future and society’s ever-growing thirst for smarter, greener chips…
Fundamental research · Research grant.From OpenAIRE (EU and national funders) · not yet reviewed
- Extreme ultraviolet lithography reaches 5 nm resolution
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high numerical aperture (high NA) EUV scanners. Hitherto, EUV interference…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- Organometallic and coordinative photoresist materials for EUV lithography and related photolytic mechanisms
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Trends in photoresist materials for extreme ultraviolet lithography: A review
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- Recent developments in photoresists for extreme-ultraviolet lithography
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOI
- The development of laser-produced plasma EUV light source
Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing…
Wuhan UniversityTongji UniversityEast China Normal UniversityHuazhong University of Science and Technology
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF
- High-NA EUV lithography: current status and outlook for the future
Abstract High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will…
Fundamental research · No laboratory or pilot wording.From OpenAlex · not yet reviewedDOIPDF